2SB653 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB653

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB653

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

hFE

DC current gain

fT

Transition frequency

VEB=-6V; IC=0

IC=-1A ; VCE=-5V

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-120

V

-120

-6

V

V

-1.5

V

-0.1 mA

-0.1 mA

35

200

20

MHz

2

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