2SB696 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SB696

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB696

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

V(BR)CBO Collector-emitter breakdown voltage IC=-5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-120

V

-150

V

-6

V

-2.5

V

-1.5

V

-0.1 mA

-0.1 mA

40

320

20

15

MHz

hFE-1 Classifications

C

D

E

F

40-80 60-120 100-200 160-320

2

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