2SB772L-P-TN3-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SB772L-P-TN3-T Datasheet PDF : 4 Pages
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2SB772
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
DC
IC
Pulse
ICP
-3
A
-7
A
Base Current
IB
-0.6
A
TO-92NL
0.5
W
Collector Dissipation (Ta=25℃)
TO-251/TO-252/
PC
TO-126/TO-126C
1
W
Junction Temperature
Storage Temperature
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICEO
Emitter Cut-Off Current
IEBO
DC Current Gain(Note 1)
hFE1
hFE2
Collector-Emitter Saturation Voltage VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-30V ,IE=0
VCE=-30V ,IB=0
VEB=-3V, IC=0
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.1A
VCB=-10V, IE=0,f=1MHz
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100 ~ 200
P
160 ~ 320
MIN TYP MAX UNIT
-40
V
-30
V
-5
V
-1000 nA
-1000 nA
-1000 nA
30 200
100 150 400
-0.3 -0.5
V
-1.0 -2.0
V
80
MHz
45
pF
E
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-016,E
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