SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB763
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;iB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.3A
ICBO
Collector cut-off current
VCB=-60V IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
hFE-2
DC current gain
DC current gain
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.0
V
-1.5
V
-0.1 mA
-0.1 mA
40
250
20
2