SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB794 2SB795
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
2SB794
-60
V(BR)CEO
Collector-emitter
breakdown voltage
IC=-10mA ;IB=0
V
2SB795
-80
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA
VBEsat
Base-emitter saturation voltage
IC=-1A ;IB=-1mA
ICBO
Collector
cut-off current
2SB794 VCB=-60V; IE=0
2SB795 VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
Switching times
1000
2000
-1.5
V
-2.0
V
-1.0
µA
-2.0
mA
30000
ton
Turn-on time
tstg
Storage time
tf
Fall time
0.5
µs
IC=-1.0A ; IB1=-IB2=-1.0mA
VCC=-50V;RL=50B
1.0
µs
1.0
µs
hFE-2 Classifications
M
L
K
2000-5000 4000-10000 8000-30000
2