2SB863 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB863 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5.0A ;IB=-0.5A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
COB
Collector output capacitance
IC=0;f=1MHz ; VCB=-10V
hFE-1 Classifications
R
O
55-110
80-160
Product Specification
2SB863
MIN TYP. MAX UNIT
-140
V
-0.60 -2.0
V
-0.96 -1.5
V
-5.0 μA
-5.0 μA
55
160
25
15
MHz
400
pF
2
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