2SB0930, 2SB0930A
50
40
(1)
30
PC Ta
(1)TC = Ta
(2)With a 50 mm × 50 mm
× 2 mm Al heat sink
(3)Without heat sink
(PC = 1.3 W)
20
10
(2)
(3)
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
−6
IB = −120 mA TC = 25°C
−5
−100 mA
−80 mA
−4
−60 mA
−3
−40 mA
−20 mA
−2
−10 mA
−8 mA
−1
−5 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−10
VCE = −4 V
−8
25°C
−6
TC = 100°C −25°C
−4
−2
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
−100
IC / IB = 10
−10
−1
− 0.1
25°C
TC = 100°C
−25°C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
hFE IC
104
VCE = −4 V
103
TC = 100°C
25°C
102
−25°C
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
fT IC
104
VCE = −5 V
f = 1 MHz
TC = 25°C
103
102
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
Safe operation area
−100
Non repetitive pulse
103
TC = 25°C
102
−10 ICP
IC
t = 1 ms
10
t = 10 ms
−1
t = 300 ms
1
− 0.1
10−1
Rth t
(1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
(1)
(2)
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
10−2
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
2
SJD00012BED