2SB965 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SB965 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=B -0.4A
VBEsat Base-emitter saturation voltage
IC=-4A ;IB=B -0.4A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE -1
DC current gain
IC=-1A ; VCE=-5V
hFE -2
DC current gain
IC=-4A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-1A ; VCE=-5V
hFE-1 classifications
R
Q
P
60-120 100-200 160-320
Product Specification
2SB965
MIN TYP. MAX UNIT
-120
V
-1.5
V
-2.0
V
-50 μA
-50 μA
60
320
20
150
pF
75
MHz
2
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