2SC1051 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC1051

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1051

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

100

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

150

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

2.0

V

VBE

Base-emitter on voltage

IC=1A ; VCE=5V

1.5

V

ICBO

Collector cut-off current

VCB=150V; IE=0

0.1 mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1 mA

体 hFE

DC current gain

固I电NC半H导ANGE SEMICONDUCTOR fT

Transition frequency

‹ hFE Classifications

C

D

E

IC=1A ; VCE=5V

IC=0.5A ; VCE=5V

F

40

320

8

MHz

40-80 60-120 100-200 160-320

2

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