2SB944 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB944 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
Product Specification
2SB944
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-3A, IB=-0.15A
VBEsat Base-emitter saturation voltage
IC=-3A, IB=-0.15A
IEBO
ICBO
hFE-1
Emitter cut-off current
Collector cut-off current
DC current gain
VEB=-5V; IC=0
VCB=-100V; IE=0
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
IC=-0.5A; VCE=-10V;f=10MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-1A;IB1=-IB2=-0.1A
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.5
V
-50
μA
-10
μA
45
90
260
30
MHz
0.15
μs
0.8
μs
0.15
μs
hFE-2 Classifications
Q
P
90-180
130-260
2
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