2SB946 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SB946 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.25A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
IC=-0.1A ; VCE=-2V
IC=-3A ; VCE=-2V
IC=-0.5A ; VCE=-10V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-3A ;IB1=-0.3A
IB2=0.3A
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
Product Specification
2SB946
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.5
V
-10 μA
-50 μA
45
60
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
2
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