2SB954 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

Manufacturer

2SB954

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB954 2SB954A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

voltage

2SB954

2SB954A

IC=-30mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-1.0A ;IB=-0.125A

VBE

Base-emitter voltage

IC=-1A ; VCE=-4V

ICEO

Collector

cut-off current

2SB954 VCE=-30V; IB=0

2SB954A VCE=-60V; IB=0

ICES

Collector

cut-off current

2SB954 VCE=-60V; VBE=0

2SB954A VCE=-80V; VBE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.2A ; VCE=-4V

hFE-2

DC current gain

IC=-1A ; VCE=-4V

fT

Transition frequency

IC=-0.2A; VCE=-5V,f=10MHz

ton

Trun-on time

ts

Storage time

tf

Fall time

IC=-1A ;VCC=-50V

IB1=-0.1A, IB2=0.1A

‹ hFE-1 Classifications

Q

P

70-150

120-250

MIN TYP. MAX UNIT

-60

V

-80

-1.0

V

-1.3

V

-300 μA

-200 μA

-1

mA

70

250

15

30

MHz

0.5

μs

1.2

μs

0.3

μs

2

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