SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2075
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3 A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1.0mA; IC=0
ICBO
Collector cut-off current
VCB=30V;IE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
COB
Output capacitance
fT
Transition frequency
VEB=4V; IC=0
IC=0.5A ; VCE=5V
IC=3A ; VCE=2V
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
1.5
V
80
V
4
V
10
µA
10
µA
25
15
40
pF
100
MHz
2