2SC2594 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC2594 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2594
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA IB=0
V(BR)CBO Collector-base breakdown voltage
IC=10μA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=3.0A; IB=0.1A(Pulse test)
ICBO
Collector cut-off current
VCB=10V; IE=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V(Pulse test)
hFE-2
DC current gain
IC=1A ; VCE=2V(Pulse test)
fT
Transition frequency
IE=-50mA ; VCB=6V
COB
Output capacitance
IE=0 ; VCB=20V,f=1MHz
MIN TYP. MAX UNIT
20
V
40
V
7
V
1.0
V
0.1 μA
140
450
70
150
MHz
50
pF
2
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