2SC2488 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC2488

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2488

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 150V(Min.)

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SA1064

APPLICATIONS

·Designed for AF amplifier, high power amplifier applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

150

V

VCEO Collector-Emitter Voltage

150

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

12

A

100

W

150

℃

Tstg

Storage Temperature

-65~150 ℃

isc Website：www.iscsemi.cn

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