2SC2712-Y(2005) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SC2712-Y Datasheet PDF : 4 Pages
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2SC2712
TYPICAL CHARACTERISTICS
240
6.0
200
160
120
IC - VCE
5.0 Common Emitter
3.0 Ta=25℃
2.0
1.0
80
0.5
40
IB=0.2mA
0
0
0 1 23 4 567
Collector-Emitter Voltage, VCE (V)
NPN SILICON TRANSISTOR
1000
IC - VCE
500
300
Ta=100℃
25
-25
100
50
Common Emitter
30
V CE=6V
V CE=1V
10
0.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)
3000
1000
500
300
fT - IC
Common Emitter
VCE=10V
Ta=25℃
100
50
30
10
0.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)
IB - VBE
3000
Common Emitter
1000 VCE=10V
500
300
100
50
30
10
5
3
1
0.5
0.3
0
Ta=100℃ 25 -25
0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE (V)
2000
1000
500
300
100
50
30
10
5
3
h Parameter, IC
Common Emitter
BL VCE=12V, f=270Hz, Ta=25℃
GR
Y
hie×KΩ O BL
BL
GR
Y
GR
O
Y
O
hoe×µS
1
0.5
0.3
0.1
0.1
O
Y BL GR hre×10-4
0.3 1 3 10 30
Collector Current, IC (mA)
h Parameter, VCE
2000 Common Emitter
1000
500
IC=2mA,
Ta=25℃,
f=270Hz
300
BL
GR hre
100
Y
50
O
30
O Y GR BL
10
5
3
GR
BL
hie×KΩ
1Y
0.5 O
0.3
hre×10-4
0.1
0.5 1 3 10 30
hoe×µS
BL
GR
Y
O
100 300
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-029.B
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