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Part Name
Description
2SC3307 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SC3307
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC3307 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
12
Common emitter
2
1.6
10
1.4
Tc = 25°C
1.2
1.0
8
0.8
0.6
6
0.4
4
0.2
IB = 0.1 A
2
0
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
3
Common emitter
IC/IB = 5
1
0.5
0.3
Tc = 100°C
0.1
25
0.05
−
55
0.02
0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current I
C
(A)
2SC3307
h
FE
– I
C
500
300
Common emitter
VCE = 5 V
100
50
Tc = 100°C
30
25
10
−
55
5
3
1
0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
5
IC/IB = 5
3
1
Tc =
−
55°C
0.5
0.3
100 25
0.1
0.05
0.03
0.003 0.01 0.03 0.1 0.3
1
3
10
Collector current I
C
(A)
10
Common emitter
VCE = 5 V
8
I
C
– V
BE
6
Ta = 100°C
4
25
2
−
55
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage V
BE
(V)
Switching Characteristics
30
IC = 10IB1
IB1 =
−
IB2
10
Pulse width = 20
μ
s
Duty cycle
≤
1%
5
3
Tc = 100°C
25
tstg
1
100
tr
0.5
tf
0.3
25
0.1
0
2
4
6
8
10
Collector current I
C
(A)
3
2006-11-09
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