2SC3978 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SC3978 Datasheet PDF : 4 Pages
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Power Transistors
2SC3978, 2SC3978A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
/ q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
e q Full-pack package which can be installed to the heat sink with
one screw
nc d s Absolute Maximum Ratings (TC=25˚C)
a e tion. Parameter
Symbol
Ratings
Unit
a Collector to 2SC3978
900
rm l base voltage 2SC3978A
VCBO
1000
V
n u fo tm Collector to 2SC3978
900
t in x.h emitter voltage 2SC3978A
VCES
1000
V
te tin tes de Collector to emitter voltage VCEO
800
V
la -in Emitter to base voltage
VEBO
7
V
ut n/e Peak collector current
ICP
3
A
abo ico Collector current
IC
2
A
in n L m Basecurrent
IB
0.5
A
R /se Collector power TC=25°C
a o g U .jp dissipation
Ta=25°C
PC
35
W
2
in o Junction temperature
c llow ic.c Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
M is it fo ason s Electrical Characteristics (TC=25˚C)
vis an Parameter
Symbol
Conditions
se ://p Collector cutoff
D lea ttp current
2SC3978
ICBO
2SC3978A
P h Emitter cutoff current
IEBO
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
50
µA
50
50
µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
800
V
hFE1
VCE = 5V, IC = 0.1A
8
Forward current transfer ratio
hFE2
VCE = 5V, IC = 0.5A
6
Collector to emitter saturation voltage VCE(sat)
IC = 0.5A, IB = 0.1A
1.5
V
Base to emitter saturation voltage VBE(sat)
IC = 0.5A, IB = 0.1A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.1A, f = 1MHz
15
MHz
Turn-on time
Storage time
Fall time
ton
IC = 0.5A, IB1 = 0.1A, IB2 = – 0.2A,
tstg
tf
VCC = 250V
0.7
µs
2.5
µs
0.3
µs
1
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