2SC3833 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SC3833

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3833

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V(Min)

·High Switching Speed

·High Reliability

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base voltage

10

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

24

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

4

A

100

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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