2SC4448 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
2SC4448
Quanzhou Jinmei Electronic
2SC4448 Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
COB
Collector output capacitance
CONDITIONS
IC=50mA IB=5mA
IC=50mA IB=5mA
VCB=200V IE=0
VEB=5V; IC=0
IC=10mA ; VCE=10V
IC=100mA ; VCE=10V
IC=40mA ; VCE=10V
f=1MHz;VCB=30V
www.jmnic.com
2SC4448
MIN
TYP.
MAX UNIT
1.0
V
1.0
V
100
μA
10
μA
40
200
20
240
MHz
3.3
pF
JMnic
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