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Part Name
Description
2SC5716 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SC5716
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
2SC5716 Datasheet PDF : 5 Pages
1
2
3
4
5
V
CE
– I
B
10
Common emitter
Tc
= -
25°C
8
6
4
2
3
4
5
IC
=
6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I
B
(A)
2SC5716
V
CE (sat)
– I
C
10
Common emitter
5
Tc
= -
25°C
3
8
6
1
4
0.5
0.3
IC/IB
=
2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I
C
(A)
V
CE
– I
B
10
Common emitter
Tc
=
25°C
8
6
4
2
34
5
IC
=
6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I
B
(A)
V
CE (sat)
– I
C
10
Common emitter
5
Tc
=
25°C
3
8
1
6
0.5
4
0.3
IC/IB
=
2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I
C
(A)
V
CE
– I
B
10
Common emitter
Tc
=
100°C
8
6
4
2
3
45
IC
=
6 A
0
0
0.4
0.8
1.2
1.6
2
2.4
Base current I
B
(A)
V
CE (sat)
– I
C
10
Common emitter
5
Tc
=
100°C
3
8
1
64
0.5
0.3
IC/IB
=
2
0.1
0.05
0.2
1
3 5 10
30 50 100
Collector current I
C
(A)
3
2001-11-27
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