2SD1115 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1115

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1115

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 300V(Min)

·High DC Current Gain

: hFE= 500(Min)@IC= 2A

APPLICATIONS

·Designed for high voltage switching, igniter applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

3

A

ICP

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

6

A

40

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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