2SD1117 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1117

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1117

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 40V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.2V(Max) @IC= 5A

·Wide Area of Safe Operation

·Complement to Type 2SB850

APPLICATIONS

·Designed for audio amplifier, series regulators and general

purpose power amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

2

A

50

W

150

℃

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

2.5

℃/W

isc Website：www.iscsemi.cn

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