2SD1191 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1191 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1191
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 2000(Min) @IC= 3.5A
·Low Saturation Voltage
·Complement to Type 2SB881
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
1.75
W
30
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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