2SD1196 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1196 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1196
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=5mA ; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞
VCEsat Collector-emitter saturation voltage IC=4A, IB=8mA
VBEsat Base-emitter saturation voltage
IC=4A, IB=8mA
ICBO
Collector cut-offcurrent
VCB=80V;IE=0
IEBO
Emitter cut-offcurrent
hFE
DC current gain
fT
Transition frequency
Switching times
VEB=5V;IC=0
IC=4A ; VCE=3V
IC=4A ; VCE=5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=500IB1=-500IB2=4A
VCC=50V;RL=12.5Ω;
MIN TYP MAX UNIT
110
V
100
V
0.9
1.5
V
2.0
V
0.1
mA
3.0
mA
1500 4000
20
MHz
0.6
μs
4.8
μs
1.6
μs
2
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