2SD1253A View Datasheet(PDF) - TY Semiconductor

Part Name

Description

Manufacturer

2SD1253A

Silicon NPN Triple Diffusion Planar Type

TY Semiconductor 

SMD Type

Transistors

Product specification

2SD1253,2SD1253A

Features

High forward current transfer ratio hFE which has satisfactory linearity.

Low collector to emitter saturation voltage VCE(sat).

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Base

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SD1253

60

V

VCBO

2SD1253A

80

V

Collector-emitter voltage

2SD1253

60

V

VCEO

2SD1253A

80

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

4

A

Peak collector current

ICP

8

A

Collector power dissipation

Ta = 25

Tc = 25

1.3

PC

W

40

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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