2SD1495 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1495

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1495

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3.5A; IB= 1A

ICBO

Collector Cutoff Current

VCB= 600V; IE= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

MIN TYP. MAX UNIT

600

V

6

V

5.0

V

1.5

V

10 μA

6

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