2SD1391 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1391 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A
VBEsat Base-emitter saturation voltage
IC=4.5A; IB=2A
ICBO
Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE
DC current gain
IC=3A ; VCE=10V
tf
Fall time
ts
Storage time
IC=4A
IBend=1.5A,LB=10μH
Product Specification
2SD1391
MIN TYP. MAX UNIT
700
V
6
V
2.0
V
1.3
V
50
μA
1.0
mA
4
15
1.0
μs
11
μs
2
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