SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1398
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector- emitter sustaining voltage IC=100mA; RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
VF
Diode forward voltage
IEC=5A
MIN TYP. MAX UNIT
800
V
1500
V
7
V
5.0
V
1.5
V
10
µA
40
130 mA
8
3
MHz
2.0
V
2