2SD1492 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SD1492

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1492

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=:

VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A

VBEsat

Base-emitter saturation voltage

IC=1.2A; IB=0.3A

ICEX

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCE=1500V; VBE=1.5V

VEB=6V; IC=0

IC=0.3A ; VCE=5V

MIN TYP. MAX UNIT

6

V

600

V

5.0

V

1.5

V

1.0

mA

1.0

mA

10

30

2

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