2SD1624
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current vs.
Base to Emitter Voltage
3.0
VCE=2V
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage, VBE (V)
1000
7
5
DC Current Gain vs. Collector Current
VCE=2V
3
Ta=75℃
2
25℃
-25℃
100
7
5
3
2
7 0.01 2 3 5 70.1 2 3 5 7 1.0 2 3 5
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-005.D