2SD1628G-X-AB3-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD1628G-X-AB3-R Datasheet PDF : 3 Pages
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2SD1628
Preliminary
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
DC
IC
5
A
Pulse
ICP
8
A
Collector Dissipation
PC
0.5
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Output Capacitance
Transition Frequency
Turn On Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
VCE(SAT) IC =3A, IB =60mA
VBE(SAT) IC =3A, IB =60mA
ICBO VCB =50V, IE =0
IEBO VEB =5V, IC =0
hFE1 VCE =2V, IC =0.5A
hFE2 VCE =2V, IC =3A
Cob VCB =10V, f =1MHz
fT VCE =10V, IC =50mA
tON
tS See specified Test circuit
tF
■ CLASSIFICATION OF hFE1
RANK
RANGE
E
120 ~ 200
F
160 ~ 320
MIN TYP MAX UNIT
500 mV
1.5 V
100 nA
100 nA
120
560
95
45
pF
120
MHz
30
ns
300
ns
40
ns
G
280 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R208-045.a
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