2SD1597 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1597 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1597
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA ;IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 30A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 60V; IB=B 0
ICBO
Collector Cutoff Current
VCB= 120V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 15A ; VCE= 2V
MIN TYP. MAX UNIT
120
V
7
V
2.0
V
2.5
V
1.0
mA
10
μA
5
mA
1000
isc Website：www.iscsemi.cn
2
Share Link: 