Power Transistors
40
35
30
(1)
25
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
20
15
(2)
10
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.6
TC=25˚C
1.4
IB=20mA
1.2
1.0
10mA
0.8
8mA
6mA
0.6
4mA
0.4
2mA
0.2
1mA
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
2SD1772, 2SD1772A
IC — VBE
4
VCE=10V
3
25˚C
2
TC=100˚C
–25˚C
1
0
0
0.4
0.8
1.2
1.6
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
10
3
1
TC=100˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
3
Collector current IC (A)
1000
hFE — IC
VCE=10V
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3
1
3
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
10
3 ICP
1 IC
0.3
Non repetitive pulse
TC=25˚C
1ms
10ms
t=0.5ms
0.1
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
102 (1) Without heat sink
(1)
(2) With a 100 × 100 × 2mm Al heat sink
10
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2