2SD1804 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD1804 Datasheet PDF : 5 Pages
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2SD1804
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
8
A
Collector Current(PULSE)
IC(PULSE)
12
A
TO-220
TA=25°C TO-251/TO-252
Collector Dissipation
TO-220
PD
TC=25°C TO-251/TO-252
2
W
1
65
W
20
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
CLASSIFICATION OF hFE1
SYMBOL
TEST CONDITIONS
BVCBO IC=10μA, IE=0
BVCEO IC=1mA, RBE=∞
BVEBO IE=10μA, IC=0
ICBO VCB=40V, IE=0
IEBO VEB=4V, IC=0
hFE1 VCE=2V, IC=0.5A
hFE2 VCE=2V, IC=6A
fT
VCE=5V, IC=1A
Cob VCE=10V, f=1MHz
VCE(SAT) IC=4A, IB=0.2A
VBE(SAT) IC=4A, IB=0.2A
tSTG See test circuit
tF
See test circuit
MIN TYP MAX UNIT
60
V
50
V
6
V
1 μA
1 μA
70
400
35
180
MHz
65
pF
200 400 mV
0.95 1.3 V
500
ns
20
ns
RANK
RANGE
Q
70-140
R
100-200
S
140-280
T
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-006,E
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