2SD1654 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SD1654

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1654

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=;

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=2.5A;IB=0.8A

IEBO

Emitter cut-off current

ICBO

Collector cut-off current

hFE

DC current gain

fT

Transition frequency

tf

Fall time

VEB=5V; IC=0

VCB=800V; IE=0

IC=0.5 A ; VCE=5V

IC=0.5 A ; VCE=10V

IC=3A;IB1=0.8A;IB2=-1.6A

VCC=200V;RL=66.7@

MIN TYP. MAX UNIT

800

1500

8.0

V

1.5

V

1.0

mA

10

µA

8

3

MHz

0.7

µs

2

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