2SD1963 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SD1963

Power transistor (50V, 3A)

ROHM Semiconductor 

Transistors

zPackaging specifications and hFE

Type

2SD1963

Package

MPT3

hFE

RS

Marking

DG∗

Code

T100

Basic ordering unit (pieces)

∗ Denotes hFE

1000

2SD1963

zElectrical characteristic curves

10

5 VCE= −2V

2

1

Ta=100°C

25°C

0.5

−25°C

0.2

0.1

0.05

0.02

0.01

5m

2m

1m

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

5000

VCE=2V

2000

1000

500

200

Ta=100°C

100

25°C

−25°C

50

20

10

5

1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.2 DC current gain vs.

collector current

2

lC/lB=40

1

0.5

Ta=100°C

Ta= −25°C

Ta= 25°C

0.2

0.1

0.05

0.02

0.01

2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation

voltage vs. collector current

Rev.A

2/2

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