2SD1857G-X-TM3-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD1857G-X-TM3-T Datasheet PDF : 3 Pages
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2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
TO-92NL
0.5
Collector Power Dissipation TO-92
PC
1
W
TO-251
2
Collector Current
IC
2
A
Collector Current
ICP
3
A
Junction Temperature
Storage Temperature
TJ
+150
℃
TSTG
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=50µA
120
V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
120
V
Emitter-Base Breakdown Voltage
BVEBO IE=50µA
5
V
Collector Cut-Off Current
ICBO VCB=100V
1
µA
Emitter Cut-Off Current
IEBO VEB=4V
1
µA
DC Current Transfer Ratio
hFE VCE=5V, IC=0.1A
82
390
Collector-Emitter Saturation Voltage VCE(SAT) IC=/IB=1A/0.1A (Note)
0.4
V
Transition Frequency
fT VCE=5V, IE= -0.1A, f=30MHz.
80
MHz
Output Capacitance
COB VCB=10V, IE=0A, f=1MHz (Note)
20
pF
Note: Measured using pulse current.
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-057,F
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