2SD2440 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD2440 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
2SD2440
Unit: mm
· High breakdown voltage: VCBO = 100 V
: VEBO = 18 V
· Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A)
· High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
· High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
100
V
60
V
18
V
6
A
12
2
A
40
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
1
2003-02-04
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