2SD2449 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD2449 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2449
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
160
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 8mA
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 160V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
V
3.0
V
100 μA
100 μA
100 μA
hFE-1
DC Current Gain
IC= 8A; VCE= 5V
3000
20000
hFE-2
DC Current Gain
IC= 12A; VCE= 5V
2000
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
30
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
150
pF
hFE-1 Classifications
A
B
C
3000-10000 5000-15000 7000-20000
isc Website：www.iscsemi.cn
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