2SD882_05 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
2SD882_05 Datasheet PDF : 4 Pages
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2SD882
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (Ta=25℃)
DC
Pulse
TO-92NL
TO-251/TO-252/
TO-126/TO-126C
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
RATINGS
40
30
5
3
7
0.6
0.5
1
UNIT
V
V
V
A
A
A
W
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO IC=100µA, IE=0
BVCEO IC=1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVEBO IE=100µA, IC=0
ICBO VCB=30V, IE=0
Emitter Cut-off Current
DC Current Gain (Note 1)
IEBO
hFE1
hFE2
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) IC=2A, IB=0.2A
VBE(SAT) IC=2A, IB=0.2A
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
MIN TYP MAX UNIT
40
V
30
V
5
V
1000 nA
1000 nA
30 200
100 150 400
0.3 0.5
V
1.0 2.0
V
80
MHz
45
pF
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-003,C
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