2SD882
TYPICAL CHARACTERISTICS
Static Characteristics
1.6 IB=9mA
IB=8mA
1.2
IB=7mA
IB=6mA
IB=5mA
0.8
IB=4mA
0.4
0
04
IB=3mA
IB=2mA
IB=1mA
8 12 16 20
Collector-Emitter voltage (V)
Current Gain-Bandwidth Product
103
102
VCE=5V
IB=8mA
101
100
10-2
10-1
100
101
Collector Current, Ic (A)
DC Current Gain
103
102
VCE=2V
101
100
100
101
103
104
Collector Current, IC (mA)
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating
Areas
150
100
S/b limited
50
0
-50 0 50 100 150 200
Case Temperature, TC (℃)
Safe Operating Area
101
10mS 1mS
100 IC(max), DC
10-1
IC(max), Pulse
10-2
100
101
102
Collector-Emitter Voltage
Saturation Voltage
104
103
VBE(SAT)
102
VCE(SAT)
101
100
100
101
102
103
104
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R209-003,C