2SK2726 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK2726

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2726

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25°C

0.5

0.3

0.2

0.1 0.1

0.05

0.03

0.02

0.011shot

pulse

0.01

10 µ

100 µ

θch – c(t) = γ s (t) • θ ch – c

θch – c = 4.17 °C/W, Tc = 25 °C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (S)

Switching Time Test Circuit

Vin Monitor

D.U.T.

Vout

Monitor

RL

Vin

10 V

50Ω

VDD

= 30 V

Switching Time Waveforms

Vin 10%

Vout 10%

90%

td(on)

tr

90%

10%

90%

td(off)

tf

8

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