2SK2736 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK2736

Silicon N Channel DV–L MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2736

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Conditions

Drain to source breakdown V(BR)DSS

30

—

—

V

voltage

ID = 10mA, VGS = 0

Gate to source breakdown V(BR)GSS

±20

—

—

V

voltage

IG = ±100µA, VDS = 0

Zero gate voltege drain

I DSS

current

—

—

10

µA

VDS = 30 V, VGS = 0

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

RDS(on)

Forward transfer admittance |yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

—

—

±10

µA

VGS = ±16V, VDS = 0

1.0

—

2.0

V

ID = 1mA, VDS = 10V

—

20

28

mΩ

ID = 15A, VGS = 10V*1

—

35

50

mΩ

ID = 15A, VGS = 4V*1

12

18

—

S

ID = 15A, VDS = 10V*1

—

750

—

pF

VDS = 10V

—

520

—

pF

VGS = 0

—

210

—

pF

f = 1MHz

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

16

—

ns

VGS = 10V, ID = 15A

—

260

—

ns

RL = 0.67Ω

—

85

—

ns

—

90

—

ns

—

1.0

—

V

IF = 30A, VGS = 0

Body to drain diode reverse trr

recovery time

—

45

—

ns

IF = 30A, VGS = 0

diF/ dt = 50A/µs

Note: 1. Pulse test

See characteristics curves of 2SK2684

3

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