2SK3373(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3373 Datasheet PDF : 6 Pages
| |||
2SK3373
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 mA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
¾
±10
mA
±30
¾
¾
V
¾
¾
100
mA
500
¾
¾
V
2.0
¾
4.0
V
¾
2.9 3.2
W
0.8
1.7
¾
S
¾
380
¾
¾
40
¾
pF
¾
120
¾
tr
VG1S0 V
0V
ton
tf
ID = 1 A VOUT
¾
15
¾
¾
25
¾
RL = 200 W
ns
¾
20
¾
toff
Duty <= 1%, tw = 10 ms VDD ~- 200 V
¾
80
¾
Qg
Qgs
VDD ~- 400 V, VGS = 10 V, ID = 2 A
Qgd
¾
9
¾
¾
5
¾
nC
¾
4
¾
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
¾
t = 1 ms
t = 100 ms
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾
¾
2
A
¾
¾
5
A
¾
¾
12
¾
¾
-1.5
V
¾ 1000 ¾
ns
¾
3.5
¾
mC
Marking
K3373
※
Type
※ Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2
2002-09-02
Share Link: 