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Part Name
Description
2SK3373(2002) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3373
(Rev.:2002)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3373 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3373
3
1
Duty
=
0.5
0.3
0.1
0.03
02
0.1
0.05
0.02
0.01
10
m
0.01
100
m
r
th
-
t
w
Single Pulse
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
6 25°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(S)
Safe operating area
30
ID max (pulsed)
*
10
ID max (pulsed)
*
3
ID max (continuous)
100
m
s
*
1 ms
*
1
DC operation
03
Tc
=
25°C
0.1
*
: Single nonrepetitive pulse
Tc
=
25°C
00 3
Curves must be derated
linearly with increase in
temperature.
00.1
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
E
AS
-
T
ch
200
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
-
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
W
V
DD
=
90 V, L
=
48.4 mH
Wave form
Ε
AS
=
1
2
×
L
×
I2
×
ççèæ
BVDSS
BVDSS
-
VDD
÷÷øö
5
2002-09-02
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