2SK3417 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3417 Datasheet PDF : 6 Pages
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RDS (ON) − Tc
10
Common source
VGS = 10 V
Pulse test
8
6
4
ID = 5 A
2.5
2
1.2
0
0
40
80
120
160
Channel temperature Tc (°C)
2SK3417
10
Common source
Tc = 25°C
Pulse test
IDR − VDS
1
10
5
3 VGS = 0, 1 V
0.1
0
−0.4
−0.8
−1.2
−1.6
Drain-source voltage VDS (V)
Capacitance – VDS
2000
1000
Ciss
500
300
100
Coss
50
30
Common source
10 VGS = 0 V
f = 1 MHz
Tc = 25°C
5
0.1
0.3 0.5 1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
PD − Tc
50
40
30
20
10
10
0
40
80
120
160
200
Case temperature Tc (°C)
Vth − Tc
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
0
40
80
120
160
Channel temperature Tc (°C)
Dynamic input/output characteristics
500
400
VDS
Common source 20
ID = 5 A
Tc = 25°C
Pulse test
16
VDD = 100 V
300
12
200
400
200
8
VGS
100
4
0
0
0
5
10
15
20
25
Total gate charge Qg (nC)
4
2006-11-06
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