2STW4466 View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
2STW4466 Datasheet PDF : 9 Pages
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2STW4466
2 Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICBO
Collector cut-off current
(IE = 0)
VCB = 100 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
100
V(BR)CEO
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
80
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 2
IC = 6 A
IB = 200 mA
IB = 600 mA
VBE (1) Base-emitter voltage
VCE = 4 V
IC = 6 A
hFE DC current gain
IC = 2 A
VCE = 4 V
50
fT
Transition frequency
IC = 0.5 A
VCE = 12 V
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
Resistive load
ton Turn-on time
tstg Storage time
tf
Fall time
IC = 3 A
VCC = 30 V
IB1 = -IB2 = 0.3 A
Typ.
20
50
0.15
1.5
0.1
Max.
0.1
0.1
0.6
1.5
1.5
120
Unit
µA
µA
V
V
V
V
V
V
MHz
pF
ns
ns
ns
Pulsed duration = 300 µs, duty cycle ≤ 1.5%
3/9
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