4128 View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
4128 Datasheet PDF : 2 Pages
| |||
UTC 4128
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING
TRANSISTORS FOR BALLASTERS
DESCRIPTION
UTC 4128 is designed for specially used for electronic
ballasters in 110VAC environment.
FEATURES
* Triple diffused technology.
1
* High switching speed
TO-126
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 4128L
RATINGS
400
200
7
5
40
150
-40 ~ +150
UNIT
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter Maintenance Voltage VCEO (SUS) IC=10mA, IB=0
200
Collector-Base Breakdown Voltage
V (BR) CBO IC=1mA, IB=0
400
Emitter-Base Breakdown Voltage
V (BR) EBO IE=1mA, IC=0
7
Collector-Base Cutoff Current
ICBO
VCB=400V, IE=0
Collector-Emitter Cutoff Current
ICEO
VCE=200V, IB=0
Emitter-Base Cutoff Current
IEBO
VEB=7V, Ic=0
DC Current Gain
hFE (1) VCE=10V, Ic=0.5A
10
hFE (2) VCE=5V, Ic=2A
10
Collector-Emitter Saturation Voltage
VCE (sat)
IC=1A, IB=0.2A
IC=4A, IB=1A
Base-Emitter Saturation Voltage
VBE (sat) IC=2A, IB=0.5A
Fall Time
tf
IC=2A, IB1= -IB2 = 0.4A
Storage Time
ts
IC=2A, IB1= -IB2 = 0.4A
Feature Frequency
fT
VCE=10V, Ic=0.5A
4
UTC UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com
TYP MAX
100
100
100
60
40
0.8
2
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
V
µs
µs
MHz
1
QW-R204-020,A
Share Link: 