6MBP100TEA060
IGBT-IPM
Switching Loss vs. Collector Current
Edc=30 0V,Vcc=15 V,Tj=25°C
10
8
6
Eon
4
2
E o ff
E rr
0
0
20 40 60 80 100 120
Collector cu rren t : Ic (A)
Reversed b iased safe operating area
Vcc=15V,Tj≦1 25°C
30 0
25 0
20 0
15 0
RBS O A(Rep etitive pu lse)
10 0
50
0
0 100 200 300 400 500 600 700
Collector-Em itter voltag e : Vce (V)
Power d eratin g for IG BT
(per device)
40 0
35 0
30 0
25 0
20 0
15 0
10 0
50
0
0 20 40 60 80 100 120 140 160
Case Temp erature : Tc (°C)
Switching Loss vs. Collector Current
Edc=300V,V cc=15V,Tj=1 25°C
10
8
Eon
6
4
Eoff
2
E rr
0
0
20 40 60 80 100 120
Collec tor cu rren t : Ic (A)
Transient therm al resistance
1
FWD
IGBT
0.1
0. 0 1
0. 00 1
0.01
0.1
1
Pu lse width :Pw (sec)
Power derating for FW D
(per device)
25 0
20 0
15 0
10 0
50
0
0 20 40 60 80 100 120 140 160
Case Temp erature : Tc (°C)